FDA59N30 数据手册
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FDA59N30 10 pages
技术规格
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: onsemi FDA59N30
- Operating Temperature: -55°C~+150°C@(Tj)
- Power Dissipation (Pd): 500W
- Total Gate Charge (Qg@Vgs): 100nC@10V
- Drain Source Voltage (Vdss): 300V
- Input Capacitance (Ciss@Vds): 4670pF@25V
- Continuous Drain Current (Id): 59A
- Gate Threshold Voltage (Vgs(th)@Id): 5V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 56mΩ@10V,29.5A
- Package: TO-3P
- Manufacturer: onsemi
- Series: UniFET™
- Packaging: Tube
- Part Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 300V
- Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 56mOhm @ 29.5A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 4670pF @ 25V
- FET Feature: -
- Power Dissipation (Max): 500W (Tc)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3PN
- Package / Case: TO-3P-3, SC-65-3
- Base Part Number: FDA59